2002. 6. 25
1/6
SEMICONDUCTOR
TECHNICAL DATA
KRC101S~KRC106S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
BIAS RESISTOR VALUES
R1
R2
COMMON
OUT
IN
TYPE NO.
R1(k )
R2(k )
KRC101S
4.7
4.7
KRC102S
10
10
KRC103S
22
22
KRC104S
47
47
KRC105S
2.2
47
KRC106S
4.7
47
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC101S 106S
V
O
50
V
Input Voltage
KRC101S
V
I
20, -10
V
KRC102S
30, -10
KRC103S
40, -10
KRC104S
40, -10
KRC105S
12, -5
KRC106S
20, -5
Output Current
KRC101S 106S
I
O
100
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC101S
KRC102S
KRC103S
KRC104S
KRC105S
KRC106S
MARK
NA
NB
NC
ND
NE
NF
Type Name
Marking
Lot No.
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